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An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density

Evgeny L. Pankratov
Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia


DOI: https://doi.org/10.52542/tjdu.1.1.10-31

Keywords: heterostructure, spatiotemporal, di-vacancies, di-interstitials, hetero-transistor.

Abstract

In this paper we introduce an approach to increase density of field-effect transistors framework an injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.



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Published
2021-04-14

How to Cite
Evgeny L. Pankratov, “An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density”, Technical Journal of Daukeyev University, Vol. 1, Issue 1, 2021, pp. 10-31.

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Volume 1, Issue 1 (2021)

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Article

Copyright © 2021 Evgeny L. Pankratov

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Copyright © 2021 Evgeny L. Pankratov
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