An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density
Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia
DOI: https://doi.org/10.52542/tjdu.1.1.10-31
Keywords: heterostructure, spatiotemporal, di-vacancies, di-interstitials, hetero-transistor.
Abstract
In this paper we introduce an approach to increase density of field-effect transistors framework an injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
References
V. I. Lachin, N. S. Savelov, Electronics, Rostov-on-Don, Phoenix, 2001.
Polishscuk, Modern Electronics, 12, 2004, 8-11.
G. Volovich. Modern Electronics. 2, 2006, 10-17.
A. Kerentsev, V. Lanin, Power Electronics, 1, 2008, 34-45.
O. Ageev, A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudrik, P. M. Litvin, V. V. Milenin, A. V. Sachenko. Semiconductors, 43(7), 2009, 897-903.
Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo, Semiconductors, 43(7), 2009, 971-974.
O. V. Alexandrov, A. O. Zakhar'in, N. A. Sobolev, E. I. Shek, M. M. Makoviychuk, E. O. Parshin.Semiconductors, 32(9), 1998, 1029-1032.
B. Ermolovich, V. V. Milenin, R. A. Red'ko, S. M. Red'ko, Semiconductors, 43(8), 2009, 1016-1020.
P. Sinsermsuksakul, K. Hartman, S. B. Kim, J. Heo, L. Sun, H. H. Park, R. Chakraborty, T. Buonassisi, R. G. Gordon, Appl. Phys. Lett., 102(5), 2013, 053901-053905.
G. Reynolds, C. L. Reynolds, J. A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, D. E. Aspnes. Appl. Phys. Lett., 102(15), 2013, 152114-152118.
N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, A. S. Yastrebov, Semiconductors, 35(8), 2001, 1013-1017.
E. L. Pankratov, E. A. Bulaeva, Reviews in Theoretical Science, 1(1), 2013, 58-82.
S. A. Kukushkin, A. V. Osipov, A. I. Romanychev, Physics of the Solid State, 58(7), 2016, 1448-1452.
E. M. Trukhanov, A. V. Kolesnikov, I. D. Loshkarev, Russian Microelectronics, 44(8), 2015, 552-558.
E. L. Pankratov, E. A. Bulaeva, Reviews in Theoretical Science, 3(4), 2015, 365-398.
K. Ong, K. L. Pey, P. S. Lee, A. T. S. Wee, X. C. Wang, Y. F. Chong, Appl. Phys. Lett., 89 (17), 2006, 172111-172114.
H. T. Wang, L. S. Tan, E. F. Chor, J. Appl. Phys., 98(9), 2006, 094901-094905.
Y. V. Bykov, A. G. Yeremeev, N. A. Zharova, I. V. Plotnikov, K. I. Rybakov, M. N. Drozdov, Yu. N. Drozdov, V. D. Skupov, Radiophysics and Quantum Electronics, 43(3), 2003, 836-843.
J. Hong, S.-H. Ann, N. Kim, Analog. Integr. Circ. Sig. Process, 86, 2016, 377-384.
Y. W. Zhang, A. F. Bower, Journal of the Mechanics and Physics of Solids, 47(11), 1999, 2273-2297.
D. Landau, E. M. Lefshits, Theoretical physics, 7 Physmatlit, Moscow, 2001 (in Russian).
Kitayama, T. Narushima, W. C. Carter, R. M. Cannon, A. M. Glaeser, J. Am. Ceram. Soc., 83, 2000, 2561.
Kitayama, T. Narushima, A. M. Glaeser, J. Am. Ceram. Soc., 83, 2000, 2572.
G. Cheremskoy, V. V. Slesov, V. I. Betekhtin, Pore in solid bodies, Energoatomizdat, Moscow, 1990 (in Russian).
Z. Yu. Gotra, Technology of microelectronic devices, Radio and communication, Moscow, 1991.
M. Fahey, P. B. Griffin, J. D. Plummer, Rev. Mod. Phys., 61(2), 1989, 289-388.
V. L. Vinetskiy, G. A. Kholodar', Radiative physics of semiconductors, Naukova Dumka, Kiev, 1979, (in Russian).
M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent'ev, K. D. Mynbaev, Techn. Phys. Lett., 34(17), 2008, 13.
Y. D. Sokolov, Applied Mechanics, 1(1), 1955, 23-35.
E. L. Pankratov, Russian Microelectronics, 36(1), 2007, 33-39.
E. L. Pankratov, Int. J. Nanoscience, 7(4-5), 2008, 187-197.
E. L. Pankratov, E. A. Bulaeva, Reviews in Theoretical Science, 1(1), 2013, 58-82.
E. L. Pankratov, E. A. Bulaeva, Int. J. Micro-Nano Scale Transp, 3(3), 2012, 119-130.
E. L. Pankratov, E. A. Bulaeva, International Journal of Modern Physics B, 29(5), 2015, 1-12.
E. L. Pankratov. J. Comp, Theor. Nanoscience, 14(10), 2017, 4885–4899.
E. L. Pankratov, E. A. Bulaeva, Materials science in semiconductor processing, 34, 2015, 260-268.
E. L. Pankratov, E. A. Bulaeva, Int. J. Micro-Nano Scale Transp, 4(1), 2014, 17-31.
E. L. Pankratov, Nano, 6(1), 2011, 31-40.
Published
2021-04-14
How to Cite
Evgeny L. Pankratov, “An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density”, Technical Journal of Daukeyev University, Vol. 1, Issue 1, 2021, pp. 10-31.
Issue
Volume 1, Issue 1 (2021)
Section
Article
Copyright © 2021 Evgeny L. Pankratov
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